DMG6301UDW-13 parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Diodes

Model:

DMG6301UDW-13

Description:

MOSFET 2N-CH 25V 0.24A SOT363

Stock:

15597

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.01

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Parameters

Current at 25 ° C - continuous drain (Id)

240mA

Drain source voltage (Vdss)

25V

FET Type

2 N-channels(two)

FET function

standard

Gate charge (Qg) at different Vgs (maximum)

0.36nC @ 4.5V

Input capacitance at different Vds (Ciss) (maximum)

27.9pF @ 10V

On resistance (maximum) for different Ids and Vgs

4 Ω @ 400mA,4.5V

Power - maximum

300mW

Vgs (th) (maximum) for different Ids

1.5V @ 250µA

packing

series

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

6-TSSOP,SC-88,SOT-363

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

DMG6301UDW-13（FET, MOSFET）ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory15597,Price reference "real-time change" China/Hongkong。 DMG6301UDW-13 package/specs, Download DMG6301UDW-13、Datasheet。